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| CZT5551 NPN SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. SOT-223 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA 180 160 6.0 600 2.0 -65 to +150 62.5 UNITS V V V mA W oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE TEST CONDITIONS VCB=120V VCB=120V, TA=100oC VEB=4.0V IC=100A IC=1.0mA IE=10A IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA MIN MAX 50 50 50 UNITS nA A nA V V V V V V V 180 160 6.0 0.15 0.20 1.00 1.00 80 80 30 250 316 SYMBOL fT Cob Cib hfe NF TEST CONDITIONS VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200A, RS=10 f=10Hz to 15.7kHz MIN 100 50 MAX 300 6.0 20 200 8.0 UNITS MHz pF pF dB All dimensions in inches (mm). LEAD CODE: 1) 2) 3) 3) BASE COLLECTOR EMITTER COLLECTOR R2 317 |
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